Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films
Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films
Yildirim, O.; Cornelius, S.; Smekhova, A.; Butterling, M.; Anwand, W.; Wagner, A.; Baehtz, C.; Böttger, R.; Potzger, K.
Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.
Keywords: dilute magnetic oxide; nanoclusters; ion implantation
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
- P-ELBE
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Nuclear Instruments and Methods in Physics Research B 389-390C(2016), 13-16
DOI: 10.1016/j.nimb.2016.11.009
Cited 3 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-22733
