Effect of hydrostatic pressure annealing on visible photoluminescence from Si⁺- and Ge⁺-implanted SiO₂ films

Effect of hydrostatic pressure annealing on visible photoluminescence from Si⁺- and Ge⁺-implanted SiO₂ films

Tyschenko, I. E.; Kachurin, G. A.; Zhuravlev, K. S.; Rebohle, L.; Skorupa, W.

• Lecture (Conference)
  11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

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