Ion-implantation induced damage In 6H-SiC: the influence of substrate temperature
Ion-implantation induced damage In 6H-SiC: the influence of substrate temperature
Wirth, H.; Anwand, W.; Mücklich, A.; Panknin, D.; Voelskow, M.; Brauer, G.; Skorupa, W.; Gonzalez-Varona, O.; Perez-Rodriguez, A.
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Lecture (Conference)
40th Electronic Materials Conference (EMC'98), Charlottesville, Virginia, USA, June 24-26, 1998
Permalink: https://www.hzdr.de/publications/Publ-2298