Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices
Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices
Tropf, L.; Kunert, G.; Jakieła, R.; Wilhelm, R. A.; Figge, S.; Grenzer, J.; Hommel, D.
In the context of recent efforts to combine high Mn concentrations in (Ga,Mn)N with a pronounced p- type carrier density, (Ga,Mn)N/GaN:Mg-superlattices have been fabricated using plasma-assisted mole- cular beam epitaxy. Profiles of the dopant atomic densities in the heterostructures are obtained by secondary ion mass spectroscopy. They show an abrupt drop of two to three orders of magnitude in both Mn and Mg concentrations after the first GaN:Mg layer above a critical Mg-flux. Scanning electron microscopy before and after selective etching reveals a polarity inversion from originally Ga-face to N- face GaN in samples in which high Mg fluxes were applied. From our observations, we are able to draw an analogy between the impurity incorporation laws of Mg and Mn.
Keywords: Doping; Molecular beam epitaxy; Nitrides; Magnetic materials
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23032) publication
-
Journal of Crystal Growth 437(2016), 49-52
DOI: 10.1016/j.jcrysgro.2015.12.010
Cited 1 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23032