Defects in zinc oxide grown by pulsed laser deposition
Defects in zinc oxide grown by pulsed laser deposition
Ling, F. C. C.; Wang, Z.; Ho, L. P.; Younas, M.; Anwand, W.; Wagner, A.; Su, S. C.; Shan, C. X.
ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (~2.4-2.5 eV) and the near band edge (NBE) emission at 3.23 eV.
Keywords: ZnO; pulsed laser deposition; Zn-vacancy; green luminescence; near band edge emission; positron annihilation spectroscopy
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
- P-ELBE
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 23037) publication
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Cited 5 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23037
