Positron mobility in semi-insulating 4H-SiC

Positron mobility in semi-insulating 4H-SiC

Beling, C. D.; Fung, S.; Cheung, S. H.; Gong, M.; Ling, C. C.; Hu, Y. F.; Brauer, G.

• Mat. Sci. Forum 255-257 (1997) 260

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