Effects of pulse-irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam

Effects of pulse-irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam

Dvurechenskii, A. V.; Zinovyev, A.; Makarov, V. V.; Grötzschel, R.; Heinig, K.-H.

• JETP Letter 64 (1996) 242

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