Annealing effects in light emitting Si nanostructures formed in SiO₂ by ion implantation and transient preheating

Annealing effects in light emitting Si nanostructures formed in SiO₂ by ion implantation and transient preheating

Kachurin, G. A.; Zhuravlev, K. S.; Pazdnikov, N. A.; Leyer, A. F.; Tyschenko, I. E.; Volodin, V. A.; Skorupa, W.; Yankov, R. A.

• Nucl. Instr. Meth. B127/128 (1997) 583

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