Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy

Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy

Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.

• Appl. Phys. Lett. 70 (1997) 2696

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