Doping of 3C-SiC by implantation of nitrogen at high temperatures

Doping of 3C-SiC by implantation of nitrogen at high temperatures

Lossy, R.; Reichert, W.; Obermeier, E.; Skorupa, W.

• J. Electronic Materials 26 (1997) 123

Permalink: https://www.hzdr.de/publications/Publ-2329