Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behaviour of nitrogen implanted $-SiC films
Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behaviour of nitrogen implanted $-SiC films
Reichert, W.; Lossy, R.; Gonzalez Sirgo, M.; Obermeier, E.; Skorupa, W.
- Diam. Relat. Mater. 6 (1997) 1445
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