Growth of buried oxide layers of SOI-structures by thermal oxidation of the top silicon layer

Growth of buried oxide layers of SOI-structures by thermal oxidation of the top silicon layer

Schroer, E.; Hopfe, S.; Tong, Q.-Y.; Gösele, U.; Skorupa, W.

• J. Electrochem. Soc. 144 (1997) 2205

Permalink: https://www.hzdr.de/publications/Publ-2347