In-situ TEM study of the evolution of CoSi₂ precipitates during annealing and ion irradiation

In-situ TEM study of the evolution of CoSi₂ precipitates during annealing and ion irradiation

Palard, M.; Ruault, M. O.; Bernas, H.; Strobel, M.; Heinig, K.-H.

• Contribution to external collection
  Proc. of the Royal Microscopical Society Conf. "Microscopy of Semiconducting Materials 1997"; Inst. Phys. Conf. Ser. 157 (1997) 501
• Lecture (Conference)
  10th International Conference on Microscopy of Semiconducting Materials, Oxford, UK, April 7 - 10, 1997

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