Structural studies of buried (SiC)1-x(AlN)x layers fabricated by co-implantation of nitrogen and aluminium ions in 6H-SiC
Structural studies of buried (SiC)1-x(AlN)x layers fabricated by co-implantation of nitrogen and aluminium ions in 6H-SiC
Pezoldt, J.; Yankov, R. A.; Fukarek, W.; Hatzopoulos, N.; Voelskow, M.; Kreißig, U.; Mücklich, A.; Brauer, G.; Anwand, W.; Heera, V.; Skorupa, W.
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Lecture (Conference)
7th Int. Conf. on Defect Recognition and Image Processing in Semiconductors (DRIP VII), Templin, Germany, Sept. 7 - 10, 1997
Permalink: https://www.hzdr.de/publications/Publ-2443