Electronic transport in helium-ion-beam etched encapsulated graphene nanoribbons
Electronic transport in helium-ion-beam etched encapsulated graphene nanoribbons
Nanda, G.; Hlawacek, G.; Goswami, S.; Watanabe, K.; Taniguchi, T.; Alkemade, P. F. A.
We report the etching and electronic transport in nanoribbons of graphene sandwiched between atomically flat hexagonal boron nitride (h-BN). The etching of ribbons of varying width was achieved with a focused beam of 30 keV He+ ions. Using in-situ electrical measurements, we established a critical dose of 7000 ions nm−2 for creating a 10 nm wide insulating barrier between a nanoribbon and the rest of the encapsulated graphene. Subsequently, we measured the transport properties of the ion-beam etched graphene nanoribbons. Conductance measurements at 4 K show an energy gap, that increases with decreasing ribbon width. The narrowest ribbons show a weak dependence of the conductance on the Fermi energy. Furthermore, we observed power-law scaling in the measured current-voltage (I-V) curves, indicating that the conductance in the helium-ion-beam etched encapsulated graphene nanoribbons is governed by Coulomb blockade.
Keywords: Helium Ion Microsope; Graphene; h-BN; Bandgap; Graphene Nanoribbons; Electronic Transport
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 24522) publication
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Carbon 119(2017), 419-425
Online First (2017) DOI: 10.1016/j.carbon.2017.04.062
Cited 26 times in Scopus -
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FOR3NANO, 25.-30.06.2017, Helsinki, Finland
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