A computational model of the formation of (SiC)1-x(AlN)x structures by hot, high-dose N+ and Al+ coimplants in 6H-SiC


A computational model of the formation of (SiC)1-x(AlN)x structures by hot, high-dose N+ and Al+ coimplants in 6H-SiC

Trushin, Y. V.; Yankov, R. A.; Kharlamov, V. S.; Kulikov, D. V.; Tsigankov, D. N.; Kreißig, U.; Voelskow, M.; Pezoldt, J.; Skorupa, W.

  • Lecture (Conference)
    Int. Conf. on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, Aug. 31 - Sept. 5, 1997

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