Investigation of ion-implantation induced damage in 6H-SiC by RBS/C and Positron Annihilation Spectroscopy

Wirth, H.; Anwand, W.; Brauer, G.; Voelskow, M.; Panknin, D.; Skorupa, W.; Coleman, P. G.

Lecture (Conference)
Int. Conf. on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, Aug. 31 - Sept. 5, 1997

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