Characterization of vacancy-type defects in ion implanted SiC by positron annihilation spectroscopy

Characterization of vacancy-type defects in ion implanted SiC by positron annihilation spectroscopy

Brauer, G.

• Lecture (Conference)
  University of the Witwatersrand (Schonland Research Centre for Nuclear Sciences), Johannesburg, 12.01.1998

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