Ultrafast carrier dynamics in VO₂ across the pressure-induced insulator-to-metal transition
Ultrafast carrier dynamics in VO₂ across the pressure-induced insulator-to-metal transition
Braun, J. M.; Schneider, H.; Helm, M.; Mirek, R.; Boatner, L. A.; Marvel, R. E.; Haglund, R. F.; Pashkin, A.
We utilize near-infrared pump ‒ mid-infrared probe spectroscopy to investigate the ultrafast electronic response of pressurized VO₂. Distinct pump‒probe signals and a pumping threshold behavior are observed even in the pressure-induced metallic state showing a noticeable amount of localized electronic states. Our results are consistent with a scenario of a bandwidth-controlled Mott-Hubbard transition.
Keywords: pressure-induced metallization; bandwidth-controlled Mott-Hubbard transition; insulator-to-metal transition; high pressure; diamond anvil cell; vanadium dioxide; VO₂; pump - probe spectroscopy
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ROBIS: 27283 is new version of this (Id 25953) publication
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Contribution to WWW
http://arxiv.org/abs/1708.08913
Permalink: https://www.hzdr.de/publications/Publ-25953
