Spatial distribution of defects in ion-implanted and annealed Si: the Rp/2 effect
Spatial distribution of defects in ion-implanted and annealed Si: the Rp/2 effect
Peeva, A.
-
Lecture (others)
Fed. Univ. of Rio Grande dol Sul, Porto Alegre, Brasilien, Oct.27, 1998
Permalink: https://www.hzdr.de/publications/Publ-2605