Photo-luminescence from SiO₂ layers implanted with Si⁺ and annealed in a pulse regime

Photo-luminescence from SiO₂ layers implanted with Si⁺ and annealed in a pulse regime

Kachurin, G. A.; Tyschenko, I. E.; Skorupa, W.; Yankov, R. A.; Zhuravlev, K. S.; Pazdnikov, N. A.; Volodin, V. A.; Gutakovskii, A. G.; Leier, A. F.

• Phys. Techn. Semicond. 31/No. 6 (1997) 730 (in Russian)
• Semicond. 31/No. 6 (1997) 626 ( English version)

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