Dopant Induced Single Electron Tunneling within the Sub-bands of Single Silicon NW Tri-gate Junctionless n-MOSFET

We report 1D electron transport of silicon functionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunnelling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant–dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.