Spatially controlled ripple formation in the HIM using low voltages and high temperatures

Ripple formation is a well known phenomenon that is observed
Conclusion
•Ripple formation has been facilitate by using a new home
Localized FIB based ripple formation
Temperature dependence Broad beam ripple formation with Ne
•Large area HIM patterning for many materials under low energy ion bombardment.
Often broad beam ion irradiation using energies of only a few keV is employed to create these self-organized patterns. We present for the first time ripple patterns that have been created in GaAs(001) using 5 keV Ne ions and elevated temperatures of up to 590 K in a Helium Ion Microscope (HIM). HIM is well known for its outstanding imaging and micro and nano fabrication capabilities.
However, most results so far have been achieved at room temperature and by using energies between 25 keV and 35 keV.
For this work we lowered the acceleration voltage to below 5 keV while maintaining an acceptable lateral resolution in the nm range .