Formation of orthorhombic (Zr,Ta)O₂ in thin Zr-Ta-O films
Formation of orthorhombic (Zr,Ta)O₂ in thin Zr-Ta-O films
Lehninger, D.; Rafaja, D.; Wünsche, J.; Schneider, F.; von Borany, J.; Heitmann, J.
The formation of orthorhombic (Zr,Ta)O2 was found in annealed thin Zr-Ta-O films with various tantalum concentrations deposited by co-sputtering a ZrO2 target and a mixed ZrO2/Ta2O5 target. In the as-deposited state, all films were amorphous. After annealing, tetragonal (Zr,Ta)O2 for [Ta]/([Ta]+[Zr]) < 0.19 and orthorhombic (Zr,Ta)O2 for [Ta]/([Ta]+[Zr]) > 0.19 were formed. Thin films with excess of tantalum ([Ta]/([Ta]+[Zr])> 0.5) decomposed into two orthorhombic phases upon crystallization: (Zr,Ta)O2 and tantalum-rich (Ta,Zr)2O5. The Rietveld analysis of Xray diffraction patterns revealed that the crystal structure of (Zr,Ta)O2 can be described with the non-centrosymmetric space group Pbc21. The broad range of tantalum concentrations, in which orthorhombic (Zr,Ta)O2 is formed as a single crystalline phase, is promising for the use of this
compound in ferroelectric field effect transistors.
Keywords: Zr-Ta-O thin films; Orthorhombic (Zr; Ta)O2; ferroelectric field effect transistors
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 26925) publication
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Applied Physics Letters 110(2017), 262903
Online First (2017) DOI: 10.1063/1.4990529
Cited 13 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-26925