Engineering and coherent control of defects in silicon carbide

Building quantum devices based on silicon carbide (SiC) is highly desirable, facilitated by established SiC CMOS technology. Optoelectronic SiC devices have already been demonstrated, however, the signal- mediating quantum defects are usually introduced in a semi-random manner, by bulk electron or neutron irradiation. We present the controlled generation of quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment [1]. The generation depth and resolution can be predicted by matching the proton energy to the material’s stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters [2]. We identify the generated centers as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess highy coherent spin properties even at room temperature [3].
[1] H. Kraus et al., Nano Lett. 17, 2865 (2017).
[2] F. Fuchs et al., Nat. Commun. 6, 7578 (2015).
[3] D. Simin et al., Phys. Rev. B 95, 161201(R) (2017).