Non equilibrium anisotropic excitons in atomically thin ReS2


Non equilibrium anisotropic excitons in atomically thin ReS2

Urban, J. M.; Baranowski, M.; Kuc, A.; Klopotowski, L.; Surrente, A.; Ma, Y.; Wlodarczyk, D.; Suchocki, A.; Ovchinnikov, D.; Heine, T.; Maude, D. K.; Kis, A.; Plochocka, P.

We present a systematic investigation of the electronic properties of bulk and few layer ReS2 van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by ∼ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calcu- lations predict bilayer ReS2 to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.

Downloads

Permalink: https://www.hzdr.de/publications/Publ-28007