Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting
Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting
Xu, C.; Wang, M.; Zhang, X.; Yuan, Y.; Zhou, S.
In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.
Keywords: Thin film; Ion implantation; Pulsed laser melting; III-V compounds
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 29152) publication
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Nuclear Instruments and Methods in Physics Research B 442(2019), 31-35
DOI: 10.1016/j.nimb.2018.12.049
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