Optical properties of ZnSxTe1-x synthesized by sulfur implantation

ZnSxTe1-x thin films were prepared by sulfur implantation into ZnTe grown by molecular beam epitaxy and subsequent pulsed laser melting. The chemical composition and layer thickness of the ZnSxTe1-x layer have been analyzed based on Rutherford backscattering spectrometry. Raman and photoluminescence spectroscopies were employed to reveal the optical properties of the ZnSxTe1-x layer. Raman spectra exhibit a redshift of the longitudinal optical photon modes with increasing sulfur concentration. The room temperature photoluminescence measurement indicates the appearance of the sulfur induced energy state in the bandgap.