Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
Balaghi, L.; Bussone, G.; Grifone, R.; Hübner, R.; Grenzer, J.; Ghorbani-Asl, M.; Krasheninnikov, A.; Schneider, H.; Helm, M.; Dimakis, E.
The realization of photonic devices for different energy ranges demands materials with different bandgaps, sometimes combined even within the same device as in multi-junction photovoltaic cells. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 29226) publication
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Nature Communications 10(2019), 2793
DOI: 10.1038/s41467-019-10654-7
Cited 80 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-29226