Response to Comment on "Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon"
Response to Comment on "Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon"
Kögler, R.; Peeva, A.; Anwand, W.; Brauer, G.; Skorupa, W.; Werner, P.; Gösele, U.
see abstract of the above mentioned publication in APL 75, 9, 1279 (1999)
- Appl. Phys. Lett. 77, 1251 (2000)
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