Effect of irradiation on defect coherence properties in silicon carbide
Effect of irradiation on defect coherence properties in silicon carbide
We have thoroughly investigated the irradiation impact on the room-temperature spin coherence properties of silicon vacancies in SiC. We have measured the spin-lattice relaxation time and the spin coherence time depending on the irradiation particle (electron, neutron and proton), irradiation fluence and irradiation energy.
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 29577) publication
-
Invited lecture (Conferences)
Ion Beam for future Technologies 2019, 01.-03.04.2019, Dubrovnik, Croatia
Permalink: https://www.hzdr.de/publications/Publ-29577
