Comparing the Response of a SiC and a sCVD Diamond Detectors to 14-MeV Neutron Radiation

Radiation detectors based on wide-bandgap semiconductors have received considerable attention in many applications such as the experiments in material testing reactors, high energy particle physics experiments, or fusion facilities for plasma diagnostics. In this paper, we compared a 4H-silicon-carbide (SiC)-based detector with a single crystal chemical vapor deposited (sCVD) diamond-based detector for 14-MeV neutron detection. For this purpose, the deuterium- tritium neutron generator of Technical University of Dresden with 14-MeV neutron output up to 10 11 n/sin 4π has been used. In this paper, we interpret the results of our first measurements with both 4H-SiC and sCVD diamond detectors at low neutron flux of 9.4 × 10 6 n/(cm 2 · s) and at room temperature.