Determination of electron effective mass in InN by cyclotron resonance spectroscopy
Determination of electron effective mass in InN by cyclotron resonance spectroscopy
Fang, X.; Zheng, F.; Drachenko, O.; Zhou, S.; Zheng, X.; Chen, Z.; Wang, P.; Ge, W.; Shen, B.; Feng, J.; Wang, X.
We report the determination of electron effective mass in InN by using cyclotron resonance (CR) spectroscopy. To avoid the influence of sapphire substrate on CR measurements, InN epilayer with low residual electron concentration of 5 × 1017 cm−3 was grown on silicon substrate. Together with analyzing the effect of non-parabolic band structure, we derive that the isotropy c-plane electron effective mass of InN epilayer is 0.050±0.002 m0 and 0.058±0.002 m0 at temperatures of 4.2 and 50 K, respectively, which is in good agreement with our theoretical predication of the effective mass near the Γ point.
Keywords: Cyclotron resonance spectroscopy; Effective mass; InN
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 29918) publication
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Superlattices and Microstructures 136(2019), 106318
DOI: 10.1016/j.spmi.2019.106318
Cited 2 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-29918