Diffusion and Interaction of In and As Implanted into SiO2 Films
Diffusion and Interaction of In and As Implanted into SiO2 Films
Tyschenko, I. E.; Voelskow, M.; Mikhaylov, A. N.; Tetelbaum, D. I.
By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is DAs = 3.2 × 10–14 cm2 s–1.
Keywords: As; diffusion; In; ion implantation; silicon oxide
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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Permalink: https://www.hzdr.de/publications/Publ-30063