Integration of 1D and 2D Materials into Functional Structures and Devices

In this talk I will make a brief overview of our activities for integration of different 1D and 2D materials into functional structures and devices.

I will first present the work on fabrication, processing and application of group IV semiconductor nanowires (NWs). These include top-down fabricated Si, SiGe and Ge NWs as well as bottom-up grown Si, Ge1-xSnx with x = 0.07-0.1 and GaAs/In0.45Ga0.55As NWs. I will also consider the innovative devices that we are targeting: junctionless nanowire transistors (JNTs), reconfigurable field effect transistors (RFETs) and band-to-band tunnel FETs (TFETs).

I will next discuss our activities for fabrication and characterisation of FETs based on 2D heterostructures. As examples I will show FETs fabricated on hBN-encapsulated InSe, a material with attractive properties but very unstable in ambient atmosphere, as well as TFETs fabricated on hBN/MoS2/WSe2/graphene heterostructures.

Finally, I will pay some attention to our work on using DNA origami templates for the fabrication of functional structures with the outlook to the application of DNA origami for self-assembly of electronic circuits. In particular, I will show fabrication of conducting metallic NWs using templates of DNA nanotubes, nanosheets and nanomoulds as well as incorporation into them of molecules and semiconducting nanoparticles for enhanced electronic functionality.