Precipitation, ripening and chemical effects durin annealing of Ge⁺ implanted Si0₂ layers

Precipitation, ripening and chemical effects durin annealing of Ge⁺ implanted Si0₂ layers

Schmidt, B.; Heinig, K.-H.; Markwitz, A.; Grötzschel, R.; Strobel, M.; Oswald, S.

• Lecture (Conference)
  11 th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

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