In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation
In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation
Hlawacek, G.; Fekri, Z.; Chava, P.; Erbe, A.
Here, in-situ Helium Ion Microscopy (HIM) has been used to electrically characterize single layer MoS 2 field effect transistors. These devices have been fabricated via chemical vapor deposition (CVD) and transferred onto SiO 2 /Si(p ++ ) chips for EBL contacting and further characterization. The oxide thickness is in the range of 200 nm to 300 nm.
Keywords: HIM; helium ion microscopy; MoS2; 2D materials
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 32177) publication
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Lecture (Conference)
(Online presentation)
M&M 2020 - Microscopy & Microanalysis, 03.-07.08.2020, Online, USA
DOI: 10.1017/S1431927620014105 -
Lecture (Conference)
(Online presentation)
CMD2020GEFES, 31.08.-04.09.2020, Madrid, Spain
Permalink: https://www.hzdr.de/publications/Publ-32177
