Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation
Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation
Abramof, E.; Beloto, A. F.; Ueda, M.; Gomes, G. F.; Berni, L. A.; Reuther, H.
High-resolution x-ray diffraction methods have been used to characterize nitrogen-doped silicon obtained by plasma immersion ion implantation.
Keywords: plasma immersion ion implantation; silicon; Auger electron spectroscopy
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Poster
IBA-14 / ECAART-6, Dresden, 26.-30.7.1999
Permalink: https://www.hzdr.de/publications/Publ-3226
