Exploring point defects and trap states in undoped SrTiO3 single crystals

The defect chemistry and electronic trapping energies in undoped single crystalline SrTiO3 were examined by electrochemical impedance spectroscopy (EIS) at low (25-160°C) and intermediate (500-700°C) temperatures. At intermediate temperatures, the electronic and ionic conductivity as well as the chemical capacitance of SrTiO3 were determined as a function of T and p(O2) by employing a modified transmission line equivalent circuit to accurately describe the measured system. Defect modelling based on chemical capacitance measurements is established as a new method to determine the concentrations and the thermodynamic properties of ionic and electronic defects in SrTiO3. This method has potential for a wide application for mixed ionic and electronic conducting materials. Impedance spectroscopy at low temperatures was used to further quantify the electronic trapping energies of the main ionic defects of SrTiO3. Utilization of the chemical capacitance allows the establishment of a defect model based solely on electrochemical measurements, which correctly predicts the conductivity and the chemical capacitance, unveiling the concentrations of internal defects. This analysis yields a concentration of 6 ppm for acceptor-type titanium vacancies in the investigated SrTiO3 single crystals, which was experimentally confirmed by complementary Positron Annihilation Lifetime Spectroscopy measurements. The employed method is sensitive for electronically relevant defects in concentrations even below 1 ppm.