Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond

Natural IIa diamond was implanted at 90 keV to 1 1015 N+/cm2 and subsequently at 150 keV to 3 1017 Si+/cm2 at a temperature of 900°C. The structure of the implanted diamond region was investigated by high resolution cross-sectional transmission electron microscopy, Raman- and infrared absorption spectrometry. A buried layer with crystalline 3C-SiC domains in perfect epitaxial relation to the diamond substrate was detected. Amorphization and graphitization was completely prevented by the elevated temperature during the implantation. Resistance measurements demonstrated low electrical resistivity in the implanted regions.