Nonlinear response of semiconductor systems under intense THz excitation
Nonlinear response of semiconductor systems under intense THz excitation
Intense narrowband terahertz pulses from the FELBE free-electron laser facility are utilized to study nonlinear excitation regimes of various degrees of freedom in semiconductors. In this talk we present several recent examples including plasmons in InGaAs nanowires, intersubband transitions in Ge/SiGe quantum wells, and impurity transitions in boron doped Si.
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 34105) publication
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Invited lecture (Conferences)
(Online presentation)
The 10th International Symposium on Ultrafast Phenomena and Terahertz Waves (ISUPTW 2021), 16.-19.06.2021, Chengdu, China -
Lecture (Conference)
International Conference on Free Electrons Laser Applications in Infrared and THz Studies of New States of Matter, 05.-08.07.2022, Warsaw, Poland
Permalink: https://www.hzdr.de/publications/Publ-34105
