Defect nanostructure and its impact on magnetism of α-Cr₂O₃ thin films

Thin films of the magnetoelectric insulator α-Cr2O3 are technologically relevant for energy-efficient magnetic memory devices controlled by electric fields. In contrast to single crystals, the quality of thin Cr2O3 films is usually compromised by the presence of point defects and their agglomerations at grain boundaries, putting into question their application potential. Here, we study the impact of the defect nanostructure including sparse small-volume defects and their complexes on the magnetic properties of Cr2O3 thin films. By tuning the deposition temperature, we tailor the type, size, and relative concentration of defects, which we then analyze based on positron annihilation spectroscopy complemented with local electron microscopy studies. The structural characterization is correlated with magnetotransport measurements and nitrogen vacancy microscopy of antiferromagnetic domain patterns. Defects pin antiferromagnetic domain walls and stabilize complex multidomain states with a typical domain size in the sub-micrometer range. Despite their influence on the domain configuration, we demonstrate that neither small open-volume defects nor grain boundaries in Cr2O3 thin films affect the Néel temperature in a broad range of deposition parameters. Our results pave the way towards the realization of spin-orbitronic devices where magnetic domain patterns can be tailored based on defect nanostructures without affecting their operation temperature.