Analysis of Low-Temperature Magnetotransport Properties of NbN Thin Films Grown by Atomic Layer Deposition

Superconducting niobium nitride (NbN) films with nominal thicknesses of 4 nm, 5 nm, 7 nm, and 9 nm were grown on
sapphire substrates using atomic layer deposition (ALD). We observed probed Hall resistance (HR) (Rxy) in external out-ofplane magnetic fields up to 6 T and magnetore-sistance (MR) (Rxx) in external in-plane and out-of-plane magnetic fields up
to 6 T on NbN thin films in Van der Pauw geometry. We also observed that positive MR dominated. Our study focused on the
analysis of interaction and localisation effects on electronic disorder in NbN in the normal state in temperatures that ranged
from 50 K down to the superconducting transition temperature. By modelling the temperature and magnetic field
dependence of the MR data, we extracted the temperature-dependent Coulomb interaction constants, spin–orbit scattering
lengths, localisation lengths, and valley degeneracy factors. The MR model allowed us to distinguish between interaction
effects (positive MR) and localisation effects (negative MR) for in-plane and out-of-plane magnetic fields. We showed that
anisotropic dephasing scattering due to lattice non-idealities in NbN could be neglected in the ALD-grown NbN thin films.