Complete recrystallization of amorphous silicon carbide layers by ion beam irradiation

Complete recrystallization of amorphous silicon carbide layers by ion beam irradiation

Heera, V.; Kögler, R.; Skorupa, W.; Stoemenos, J.

• Applied Physics Letters 67 (1995) 14 pp. 1999-2001
  DOI: 10.1063/1.114766
  Cited 61 times in Scopus

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