A photonic platform hosting telecom photon emitters in silicon


A photonic platform hosting telecom photon emitters in silicon

Jagtap, N. S.; Hollenbach, M.; Fowley, C.; Baratech, J.; Guardia-Arce, V.; Kentsch, U.; Eichler-Volf, A.; Abrosimov, N. V.; Erbe, A.; Shin, C.; Kim, H.; Helm, M.; Lee, W.; Astakhov, G. V.; Berencén, Y.

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures is advantageous to exploit their full potential for integrated photonic quantum technologies [1] [2]. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimetre with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm G-center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.

Keywords: G centers; MACEtch

Involved research facilities

Related publications

  • Open Access Logo Poster
    LEAPS meets Quantum Technology, 15.-20.05.2022, Elba Island, Italy

Permalink: https://www.hzdr.de/publications/Publ-34566