Data: Fully encapsulated and stable black phosphorus field-effect transistors
Data: Fully encapsulated and stable black phosphorus field-effect transistors
Arora, H.; Fekri, Z.; Vekariya, Y. N.; Chava, P.; Watanabe, K.; Taniguchi, T.; Helm, M.; Erbe, A.
Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.
Keywords: two-dimensional semiconductors; black phosphorus; field-effect transistors; hexagonal boron nitride; encapsulation
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 34592) publication
- DOI: 10.1002/admt.202200546 references this (Id 34592) publication
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Fully encapsulated and stable black phosphorus field-effect transistors
ROBIS: 34502 has used this (Id 34592) publication of HZDR-primary research data
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Reseach data in the HZDR data repository RODARE
Publication date: 2022-04-29 Open access
DOI: 10.14278/rodare.1551
Versions: 10.14278/rodare.1552
License: CC-BY-4.0
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Permalink: https://www.hzdr.de/publications/Publ-34592
