Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon

Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon

Jäger, H.-U.

• Contribution to proceedings
  Mat. Res. Soc. Symp., MRS Spring Meeting 1995, San Francisco
• Journal of Applied Physics 78 (1), 1 July 1995, 176-186
  DOI: 10.1063/1.360649
  Cited 23 times in Scopus

Permalink: https://www.hzdr.de/publications/Publ-346