Magnetoelectric antiferromagnet Cr2O3 for spinorbitronic applications
Magnetoelectric antiferromagnet Cr2O3 for spinorbitronic applications
Abstract
In this presentation, we reviewed our recent activities on the fabrication and characterization of thin film and SPS-sintered Cr2O3 samples for MRAM and domain wall based memory applications.
Keywords: antiferromagnetic spintronics; Cr2O3 thin films
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 34658) publication
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Sonstiger Vortrag
Seminar at the University of Leipzig, Fakultät für Physik und Geowissenschaften, Felix-Bloch-Institut für Festkörperphysik, 11.05.2022, Leipzig, Germany
Permalink: https://www.hzdr.de/publications/Publ-34658
