Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination

Self-interstitials were introduced by additional Si+ implantation into the vacancy-dominated depth range around half of the projected ion range, RP/2, of high-energy ion-implanted Si in order to balance radiation-induced excess vacancies. The undesired gettering of Cu atoms in this region (RP/2 effect) could be suppressed. The threshold was determined necessary to remove the Cu gettering at RP/2. It does approximately agree with the number of the calculated excess vacancies. Additional interstitial-type dislocation loops were formed during annealing at RP/2 as the Si+ fluence exceeds this threshold. Interstitial clusters were not approved to be the gettering centres for Cu trapping