Helium implantation induced metal gettering in silicon at half of the projected ion range

Damage has been observed in 40 keV He ion-implanted Si away from the projected ion range Rp, mainly around Rp/2. Cu gettering has been used for the detection of irradiation defects which are formed during rapid thermal annealing (RTA) of 800°C/10 min. The transmission electron microscopy (TEM) micrographs show no visible defects at Rp/2. The Cu gettering peak at Rp/2 is well known for MeV-ion-implanted and annealed Si (Rp/2 effect). In this study the corresponding effect is observed for low ebergy implantation of a light ion like He.